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상세설명 | 제조사 |
Silicon N Channel IGBT
RJH60F4DPK
Silicon N Channel IGBT High Speed Power Switching
Features
High speed switching Low on-state voltage Fast recovery diode
Preliminary
REJ03G1835-0100 Rev.1.00 Oct 13, 2009
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
C 4
G
1. Gate 2. Collector 3. Emitter 4. Collector (Flange)
E
1
2
3
Absolute Maximum Ratings
(Tc = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25 °C Tc = 100 °C Collector peak current Collector
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