RJH60M5DPQ-A0 PDF 데이터시트 검색

Preliminary Datasheet RJH60M5DPQ-A0 600 V - 37 A - IGBT Application: Inverter Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer technology High speed switching tf = 80 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 37 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0536EJ0100 Rev.1.00 Sep 02, 2011 Outline REN