RJK03F8DNS PDF 데이터시트 검색

Preliminary Datasheet RJK03F8DNS Silicon N Channel Power MOS FET Power Switching Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 7 m typ. (at VGS = 8 V) Pb-free Halogen-free REJ03G1918-0100 Rev.1.00 Apr 21, 2010 Outline RENESAS Package code: PWSN0008JB-A (Package name: HWSON-8) 5 6 7 8 D D D D 5 6 7 8 4 G 4 3 2 1 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Ite