RJK03M5DNS PDF 데이터시트 검색

RJK03M5DNS Silicon N Channel Power MOS FET Power Switching Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.2 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-A (Package name: HWSON-8) 5 6 78 Preliminary Datasheet R07DS0769EJ0110 Rev.1.10 May 29, 2012 5 678 D DDD 4 321 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1 23 Absolute Maximum Ratings Item Drain to source vol