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상세설명 | 제조사 |
N Channel Power MOS FET
RJK03N3DPA
30V, 35A, 4.7mΩmax. Built in SBD N Channel Power MOS FET High Speed Power Switching
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free
Outline
Preliminary Datasheet
R07DS0784EJ0200 Rev.2.00
Feb 12, 2013
RENESAS Package code: PWSN0008DE-A (Package name: WPAK(3F))
5678
5 678 D DDD
4321
4 G
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
S SS 1 23
Absolute Maximum Ratings
Item Drain to source vo
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