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상세설명 | 제조사 |
Silicon N-Channel MOS FET
RJK0636JPD
60 V - 25 A - N Channel Power MOS FET High Speed Power Switching
Preliminary Datasheet
R07DS0365EJ0200 Rev.2.00
Aug 29, 2012
Features
For Automotive application AEC-Q101 compliant Low on-resistance : RDS(on) = 18 m typ. Capable of 4.5 V gate drive Low input capacitance : Ciss = 750 pF typ
Outline
RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S))
4
2, 4 D
123
1G
1. Gate 2. Drain 3. Source 4. Drain
S 3
Absolute Maximum Ratings
Item Drain to source voltage Gate
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