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RJK0636JPD PDF 데이터시트 검색

 



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Silicon N-Channel MOS FET

RJK0636JPD 60 V - 25 A - N Channel Power MOS FET High Speed Power Switching Preliminary Datasheet R07DS0365EJ0200 Rev.2.00 Aug 29, 2012 Features For Automotive application AEC-Q101 compliant Low on-resistance : RDS(on) = 18 m typ. Capable of 4.5 V gate drive Low input capacitance : Ciss = 750 pF typ Outline RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S)) 4 2, 4 D 123 1G 1. Gate 2. Drain 3. Source 4. Drain S 3 Absolute Maximum Ratings Item Drain to source voltage Gate
Renesas
Renesas

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