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상세설명 | 제조사 |
Silicon N Channel Power MOS FET
RJK0852DPB
80V, 30A, 12m max. Silicon N Channel Power MOS FET Power Switching
Preliminary Datasheet
R07DS0080EJ0200 Rev.2.00
Apr 09, 2013
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting
Low on-resistance
RDS(on) = 9 m typ. (at VGS = 10 V) Pb-free Halogen-free
Outline
RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK)
5 1 234
5 D
4 1, 2, 3 Source G 4 Gate
5 Drain
SSS 123
Applications
Switching Mode Power Supply
Absolute Maxim
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