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RJK2006DPJ PDF 데이터시트 검색

 



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Silicon N Channel MOS FET High Speed Power Switching

RJK2006DPJ, RJK2006DPE, RJK2006DPF Silicon N Channel MOS FET High Speed Power Switching REJ03G0512-0100 Rev.1.00 Jan.14.2005 Features Low on-resistance Low leakage current High speed switching Outline LDPAK D 4 4 4 G 1 1 2 3 1 S 3 RJK2006DPE 2 3 RJK2006DPF RJK2006DPJ 2 1. Gate 2. Drain 3. Source 4. Drain Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode
Renesas Technology
Renesas Technology

DataSheet.kr       |      2020      |     연락처      |     링크모음      |      신규     |      사이트맵 :    1,      2