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상세설명 | 제조사 |
IGBT
Preliminary Datasheet
RJP65S05DWT, RJP65S05DWA
650V - 75A - IGBT Application: Inverter
Features
Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 75 A, VGE = 15 V, Ta = 25 C) High speed Switching Short circuit withstands time (10 s min.) R07DS0822EJ0001 Rev.0.01 Jul 05, 2012
Outline
Die: RJP65S05DWT-80
2 C 3
Wafer: RJP65S05DWA-80
2
1G
1
3
1. Gate 2. Collector (The back) 3. Emitter
E 3
3
www.t.net,
Absolute Maximum Ratings
(Ta = 25°C)
Item Collector to
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