RQA0009SXAQS PDF 데이터시트 검색

RQA0009SXAQS Silicon N-Channel MOS FET REJ03G1566-0100 Rev.1.00 Jul 04, 2007 Features High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% (VDS = 6 V, f = 520 MHz) Compact package capable of surface mounting Electrostatic Discharge Immunity Test (IEC Standard, 61000-4-2, Level4) Outline RENESAS Package code: PLZZ0004CA-A (Package Name : UPAK R ) 3 3 2 1 1 4 1. Gate 2. Source 3. Drain 4. Source 2, 4 Note: Marking is “SX”. *UPAK is a tra