RQK0604IGDQA PDF 데이터시트 검색

RQK0604IGDQA Silicon N Channel MOS FET Power Switching REJ03G1496-0100 Rev.1.00 Jan 15, 2007 Features Low on-resistance RDS(on) = 111 mΩ typ.(at VGS = 4.5 V, ID = 1 A) Low drive current High speed switching VDSS ≥ 60 V and capable of 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 1 2 2 G 1. Source 2. Gate 3. Drain S 1 Note: Marking is “IG“. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain