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상세설명 | 제조사 |
Silicon N-Channel MOS FET
RQK0605JGDQA
Silicon N Channel MOS FET Power Switching
Features
Low on-resistance RDS(on) = 82 m typ (VGS = 10 V, ID = 1.5 A)
Low drive current High speed switching 4.5 V gate drive
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK)
3
1 2
Note: Marking is “JG”.
Preliminary Datasheet
R07DS0309EJ0500 (Previous: REJ03G1278-0400)
Rev.5.00 Mar 28, 2011
3 D
G 1. Source 2 2. Gate
3. Drain S 1
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage Gate to source voltage D
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