RQK0609CQDQS PDF 데이터시트 검색

RQK0609CQDQS Silicon N Channel MOS FET Power Switching Features Low on-resistance RDS(on) = 78 mΩ typ.(at VGS = 4.5 V, ID = 2 A) Low drive current High speed switching VDSS : 60 V and capable of 2.5 V gate drive Outline RENESAS package code: PLZZ0004CA-A (Package name: UPAK R ) 1 2 3 4 1G Note: Marking is “CQ“. REJ03G1622-0100 Rev.1.00 Mar 03, 2008 2, 4 D 1. Gate 2. Drain 3. Source 4. Drain S 3 Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage