RSD200N10 PDF 데이터시트 검색

4V Drive Nch MOSFET RSD200N10 Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be 20V. 5) Drive circuits can be simple. 6) Parallel use is easy. Applications Switching Dimensions (Unit : mm) CPT3 (1)Base(Gate) (2)Collector(Drain) (3)Emitter(Source) Packaging specifications Package Code Type Basic ordering unit (pieces) RSD200N10 Taping TL 2500 Absolute maximum ratin