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상세설명 | 제조사 |
N-Channel Advanced Power MOSFET
RU1H130R
N-Channel Advanced Power MOSFET
Features
100V, 130A,
RDS (ON) =7mΩ(Typ.)@VGS=10V
Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)
Pin Description
Applications
High Efficiency Synchronous Rectification in SMPS High Speed Power Switching
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum J
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