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N-Channel Advanced Power MOSFET
RU60E25L
N-Channel Advanced Power MOSFET
MOSFET
Features
60V, 25A, RDS (ON) =35mΩ(Typ.)@VGS=10V RDS (ON) =42mΩ(Typ.)@VGS=4.5V
Super High Dense Cell Design
ESD protected
Reliable and Rugged
Lead Free and Green Devices Available (RoHS Compliant)
Pin Description
TO252
Applications
Power Management.
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Tem
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