RU6H2L PDF 데이터시트 검색

RU6H2L N-Channel Advanced Power MOSFET Features 600V, 2A, RDS (ON) =4000mΩ(Typ.)@VGS=10V Gate charge minimized Low Crss( Typ. 5pF) Extremely high dv, dt capability 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Applications High efficiency switch mode power supplies Lighting Pin Description D G S TO252 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage