![]() |
상세설명 | 제조사 |
8A/ 1000V Ultrafast Diodes
MUR8100E, RURP8100
Data Sheet December 2002
8A, 1000V Ultrafast Diodes
The MUR8100E and RUR8100 are ultrafast diodes (trr < 75ns) with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction. These devices are intended for use as energy steering, clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast reco
| ![]() Fairchild Semiconductor |