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SIGC12T120 PDF 데이터시트 검색

 



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IGBT Chip

SIGC12T120 IGBT Chip FEATURES: 1200V Trench & Field Stop technology low turn-off losses short tail current positive temperature coefficient easy paralleling 3 This chip is used for: power module C Applications: drives G E Chip Type SIGC12T120 VCE 1200V ICn 8A Die Size 3.54 x 3.5 mm2 Package sawn on foil Ordering Code Q67050A4102-A001 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total , active Thickness Wafer size Flat position Max.possible chips per
Infineon Technologies
Infineon Technologies

DataSheet.kr       |      2020      |     연락처      |     링크모음      |      신규     |      사이트맵 :    1,      2