SIHD7N60E-GE3 PDF 데이터시트 검색

SiHD7N60E www.vishay.com Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C ( ) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 40 5 9 Single 650 0.6 FEATURES Low Figure-of-Merit (FOM) Ron x Qg Low Input Capacitance (Ciss) Reduced Switching and Conduction Losses Ultra Low Gate Charge (Qg) Avalanche Energy Rated (UIS) Material categorization: For definitions of compliance please see www.vishay.com, doc 99912 APPLICATIONS D DPAK (TO-