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Power MOSFET ( Transistor )
Power MOSFET
IRF630, SiHF630
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) ( ) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
200 VGS = 10 V
43 7.0 23 Single
0.40
TO-220AB
D
G
S D G
S N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES Dynamic dV, dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002, 95, EC
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFE
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