SIHFBE30 PDF 데이터시트 검색

Power MOSFET IRFBE30, SiHFBE30 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) ( ) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 800 VGS = 10 V 78 9.6 45 Single D TO-220AB 3.0 G S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES Dynamic dV, dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002, 95, EC Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFE