SIHFIBE30G PDF 데이터시트 검색

IRFIBE30G, SiHFIBE30G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 78 9.6 45 Single D FEATURES 800 3.0 TO-220 FULLPAK Isolated Package High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) Sink to Lead Creepage Distance = 4.8 mm Dynamic dV, dt Rating Low Thermal Resistance Lead (Pb)-free Available Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer wi