SIHFIBF30G PDF 데이터시트 검색

IRFIBF30G, SiHFIBF30G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 78 10 42 Single D FEATURES 900 3.7 Isolated Package High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) Sink to Lead Creepage Distance = 4.8 mm Dynamic dV, dt Rating Low Thermal Resistance Lead (Pb)-free Available Available RoHS* COMPLIANT TO-220 FULLPAK DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with