SIHL530 PDF 데이터시트 검색

IRL530, SiHL530 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 5.0 V 28 3.8 14 Single D FEATURES 100 0.16 Dynamic dV, dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive R DS(on) Specified at VGS = 4 V and 5 V 175 °C Operating Temperature F ast Switching Ease of Paralleling Compliant to RoHS Directive 2002, 95, EC Available RoHS* COMPLIANT TO-220AB DESCRIPTION G G D S S N-Channel MOSFET Third ge