SP2106 PDF 데이터시트 검색

Green Product SP2106 Ver 1.1 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 100V ID 1A R DS(ON) ( Ω) Max 2.0 @ VGS=10V 2.4 @ VGS=4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D2 D2 PIN1 5 6 7 8 4 3 2 1 G2 S2 G1 S1 D1 PDFN 5x6 D1 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-So