SPN4972B PDF 데이터시트 검색

SPN4972B N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4972B is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES 30V, 9A,RDS(ON)= 17mΩ@VGS= 10V 3