SPN8910S89TGB PDF 데이터시트 검색

SPN8910 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8910 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The SPN8910 has been designed specifically to improve the overall efficiency of DC, DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. FEATURES 100V, 2A,RDS(ON)= 320mΩ@VGS= 10V H