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STGW35NB60S PDF 데이터시트 검색

 



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IGBTs

STGW35NB60S N-channel 35A - 600V - TO-247 Low drop PowerMESH™ IGBT Features Type STGW35NB60S ■ ■ ■ VCES 600V IC VCE(sat) (Max)@ 25°C @100°C < 1.7V 35A Low on-voltage drop (VCEsat) Low input capacitance High current capability TO-247 Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. Internal schematic diagram Applications ■ �
ST Microelectronics
ST Microelectronics

DataSheet.kr       |      2020      |     연락처      |     링크모음      |      신규     |      사이트맵 :    1,      2