STW11NB80 PDF 데이터시트 검색

® STW11NB80 N-CHANNEL 800V - 0.65Ω - 11A - T0-247 PowerMESH™ MOSFET TYPE STW 11NB80 s s s s s s V DSS 800 V R DS(on) < 0.8 Ω ID 11 A TYPICAL RDS(on) = 0.65 Ω EXTREMELY HIGH dv, dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 2 1 3 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The n