T30N60BD1 PDF 데이터시트 검색

High Speed IGBT with Diode IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1 VCES IC25 VCE(sat) Short Circuit SOA Capability tfi = 600 V = 55 A = 2.0 V = 140 ns Symbol VCES VCGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 10 W Clamped inductive load, VCL = 0.8 VCES VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 33 W, non repetitive TC = 25°C Maximum Ratings 600 600 ±20 ±30 55 30 11