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상세설명 | 제조사 |
(T431616D/E) 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
tm
TE CH
T431616D, E
SDRAM
FEATURES
Fast access time: 5, 6, 7 ns Fast clock rate: 200, 166, 143 MH- Self refresh mode: standard and low power Internal pipelined architecture 512K word x 16-bit x 2-bank Programmable Mode registers - CAS# Latency: 1, 2, or 3 - Burst Length: 1, 2, 4, 8, or full page - Burst Type: interleaved or linear burst - Burst stop function Individual byte controlled by LDQM and UDQM Auto Refresh and Self Refresh 4096 refresh cycles, 64ms CKE power down mode JEDEC
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