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TJ100F04M3L PDF 데이터시트 검색

 



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MOSFETs

TJ100F04M3L MOSFETs Silicon P-Channel MOS (U-MOS ) TJ100F04M3L 1. Applications Automotive Relay Drivers DC-DC Converters Motor Drivers 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 2.8 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 A (max) (VDS = -40 V) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-220SM(W) 4. Absolute Maximum Ratings (Note) (Ta = 25 unless othe
Toshiba Semiconductor
Toshiba Semiconductor

DataSheet.kr       |      2020      |     연락처      |     링크모음      |      신규     |      사이트맵 :    1,      2