TJ30S06M3L PDF 데이터시트 검색

TJ30S06M3L MOSFETs Silicon P-Channel MOS (U-MOS ) TJ30S06M3L 1. Applications Automotive Motor Drivers DC-DC Converters Switching Voltage Regulators 2. Features (1) (2) (3) (4) AEC-Q101 qualified Low drain-source on-resistance: RDS(ON) = 16.8 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 A (max) (VDS = -60 V) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source DPAK+ Start of commercial prod