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상세설명 | 제조사 |
MOSFETs
TJ40S04M3L
MOSFETs Silicon P-Channel MOS (U-MOS )
TJ40S04M3L
1. Applications
Automotive Motor Drivers DC-DC Converters Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 7.0 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 A (max) (VDS = -40 V) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA)
3. Packaging and Internal Circuit
1: Gate 2: Drain (heatsink) 3: Source
DPAK+
4. Absolute Maximum Ratings (Note) (Ta = 25 unle
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