TJ9A10M3 PDF 데이터시트 검색

TJ9A10M3 MOSFETs Silicon P-Channel MOS (U-MOS ) TJ9A10M3 1. Applications Switching Voltage Regulators Low drain-source on-resistance: RDS(ON) = 120 mΩ (typ.) (VGS = -10 V) 2. Features (1) (2) (3) Enhancement mode: Vth = -2.0 to -4.0 V (VDS = -10 V, ID = -1 mA) Low leakage current: IDSS = -10 A (max) (VDS = -100 V) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source