TK10A60E PDF 데이터시트 검색

TK10A60E MOSFETs Silicon N-Channel MOS (π-MOS ) TK10A60E 1. Applications Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.54 Ω (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS 1 2013-02-13 Rev.2.0 TK10A60E 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Chara