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TK10S04K3L PDF 데이터시트 검색

 



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MOSFETs

TK10S04K3L MOSFETs Silicon N-channel MOS (U-MOS ) TK10S04K3L 1. Applications Automotive Motor Drivers DC-DC Converters Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 22 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 A (max) (VDS = 40 V) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source DPAK+ 4. Absolute Maximum Ratings (Note) (Ta = 25 unless othe
Toshiba Semiconductor
Toshiba Semiconductor

DataSheet.kr       |      2020      |     연락처      |     링크모음      |      신규     |      사이트맵 :    1,      2