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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)

TPCS8205 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) TPCS8205 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs l l l l l Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 30 mΩ (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 20 V) Enhancement-mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 A) Unit: mm Maximum Ratings (Ta = 25°C) Characteristi
Toshiba Semiconductor
Toshiba Semiconductor

DataSheet.kr       |      2020      |     연락처      |     링크모음      |      신규     |      사이트맵 :    1,      2