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상세설명 | 제조사 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)
TPCS8205
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)
TPCS8205
Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs
l l l l l Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 30 mΩ (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 20 V) Enhancement-mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 A) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristi
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