TPCS8214 PDF 데이터시트 검색

TPCS8214 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) TPCS8214 Lithium Ion Battery Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 10.5mΩ (typ.) High forward transfer admittance: |Yfs| = 10S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 0.5~1.4 V (VDS = 10 V, ID = 200μA) Common drain Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit