UPA803T PDF 데이터시트 검색

PRELIMINARY DATA SHEET SILICON TRANSISTOR PA803T NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD PA803T has built-in 2 transistors which were developed for UHF. PACKAGE DRAWINGS (Unit: mm) FEATURES High fT fT = 5.5 GH- TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) 0.65 0.65 2.1±0.1 1.25±0.1 1.3 Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f = 1 MHz) A Surface Mounting Package Adopted Built-in 2 Transistors (2 × 2SC4570) 2.0±0.2 2 3 0.9±0.1 ORDERING INFORMATION PA