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상세설명 | 제조사 |
High Performance 512M-Bit DDR SDRAM
V58C2512(804, 404, 164)SB HIGH PERFORMANCE 512 Mbit DDR SDRAM 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 8Mbit X 16 (164)
5 DDR400 Clock Cycle Time (tCK2.5) Clock Cycle Time (tCK3) System Frequency (fCK max) 6ns 5ns 200 MHz
6 DDR333 6ns 166 MHz
75 DDR266 7.5ns 133 MHz
Features
■ High speed data transfer rates with system frequency up to 200MH- ■ Data Mask for Write Control ■ Four Banks controlled by BA0 & BA1 ■ Programmable CAS Latency: 2.5, 3 ■ Programmable
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