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상세설명 | 제조사 |
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
www.vishay.com
V8P15
Vishay General Semiconductor
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.58 V at IF = 4 A
TMBS® eSMP® Series
K
1 2
TO-277A (SMPC)
K Cathode
Anode 1 Anode 2
FEATURES
Very low profile - typical height of 1.1 mm
Available
Ideal for automated placement
Trench MOS Schottky technology
Low forward voltage drop, low power losses
High efficiency operation
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
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