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상세설명 | 제조사 |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
New Product
VF30M120C
www.vishay.com
Vishay General Semiconductor
Ultra Low VF = 0.52 V at IF = 5 A
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
TMBS ®
ITO-220AB
FEATURES
Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 Compliant to RoHS Directive 2002, 95, EC and in accordance to WEEE 2002, 96, EC Halogen-free according to IEC 61249-2-21 definition
1 VF30M120C
PI
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