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상세설명 | 제조사 |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
New Product
VFT2060C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.40 V at IF = 5 A
TMBS ®
ITO-220AB
FEATURES
Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 Compliant to RoHS Directive 2002, 95, EC and in accordance to WEEE 2002, 96, EC Halogen-free according to IEC 61249-2-21 definition
1 VFT2060C
PIN 1 PIN 3 PIN 2
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