VMO580-02F PDF 데이터시트 검색

HipPerFETTM Module N-Channel Enhancement Mode VMO 580-02F VDSS ID25 RDS(on) = 200 V = 580 A = 3.8 mΩ D S D G KS G KS S Preliminary Data MOSFET Symbol VDSS VGS ID25 ID80 IF25 IF80 TC = 25°C TC = 80°C (diode) TC = 25°C (diode) TC = 80°C Conditions TVJ = 25°C to 150°C Maximum Ratings 200 ±20 580 430 580 430 V V A A A A Features HiPerFETTM technology - low RDSon - dv, dt ruggedness - fast intrinsic reverse diode package - low inductive current path - screw connection to high curre