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상세설명 | 제조사 |
Trench MOS Barrier Schottky Rectifier
New Product
VT1045CBP
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
Ultra Low VF = 0.34 V at IF = 2.5 A
TMBS ®
TO-220AB
FEATURES
Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Solder dip 275 °C max. 10 s, per JESD 22-B106 Compliant to RoHS Directive 2002, 95, EC and in accordance to WEEE 2002, 96, EC
2 3
Halogen-free according to IEC 61249-2-21 definition
VT1045CBP
PIN 1 PIN
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