WNMD2160 PDF 데이터시트 검색

WNMD2160 Dual N-Channel, 20V, 6.3A, Power MOSFET VDS (V) Rds(on) ( ) 0.0157@ VGS=4.5V 0.018@ VGS=3.1V 20 0.020@ VGS=2.5V ESD Rating: 2000V HBM WNMD2160 Http, , :www.willsemi.com Descriptions The WNMD2160 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD2160 is Pb-free. Features SOT