XP161A11A1PR PDF 데이터시트 검색

x N-Channel Power MOS FET x DMOS Structure x Low On-State Resistance: 0.105Ω MAX x Gate Protect Diode Built-in x Ultra High-Speed Switching x SOT-89 Package s General Description The XP161A11A1PR is a N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-89 package makes high den