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Datasheet 1SS422 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 1SS422 | High speed Switching Diode BL Galaxy Electrical
High speed Switching Diode
FEATURES
z High reliability with high surge current handing capability.
z Small package. z High speed.
Pb
Lead-free
Production specification
1SS422
APPLICATIONS
z High speed switching.
ORDERING INFORMATION
Type No.
Marking
1SS422
6
SOD-523
Pa |  Galaxy Semi-Conductor | diode |
| 2 | 1SS422 | Silicon Epitaxial Planar Type Diode TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS422
High-Speed Switching Applications
Low forward voltage VF = 0.23 V (typ.)@IF = 5 mA • Small package suitable for mounting on a small space
1SS422
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maxi |  Toshiba | diode |
| 3 | 1SS422 | High Speed SWITCHING Diodes Transys
Electronics
LIMITED
SOD-523 Plastic-Encapsulated Diodes
1SS422 High Speed SWITCHING Diodes
FEATURES z Small surface mounting type z High Speed z High reliability with high surge current handing capability
MARKING: 6
Maximum Ratings and Electrical Characteristics, Single Diode @TA= 25℃
Pa |  TRANSYS | diode |
| 4 | 1SS422 | High Speed Switching Diodes 1SS422
High Speed Switching Diodes
SOD-523
Features
High reliability with high surge current handing capability.
Small package. High speed.
Applications
High speed switching.
Dimensions in inches and (millimeters)
Ordering Information
Type No. 1SS422
Marking 6
Package Code SOD-523
|  LGE | diode |
| 5 | 1SS422 | High Speed SWITCHING Diodes 1SS422
High Speed SWITCHING Diodes
.006(0.15) .0098(0.25)
.0098(0.25) .014(0.35)
SOD-523
.059(1.50) .067(1.70) .043(1.10) .051(1.30)
12
.028(0.70) .035(0.90)
.003(0.07) .008(0.20)
.012(0.50) .028(0.70)
FEATURES
Small suface mounting type High Speed High reliability with high surge current hand |  PACELEADER | diode |
1SS Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 1SS104 | SILICON PLANAR TYPE DIODE Toshiba Semiconductor diode | | |
| 2 | 1SS106 | SILICON SCHOTTKY BARRIER DIODE 1SS106
SILICON SCHOTTKY BARRIER DIODE
for various detector, high speed switching
Features • Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal.
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Reverse Voltage Average Forward Current Junction T  SEMTECH diode | | |
| 3 | 1SS106 | Silicon Schottky Barrier Diode 1SS106
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
REJ03G0125-0200Z (Previous: ADE-208-153A)
Rev.2.00 Oct.23.2003
Features
• Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal..
Ordering Information
Type No. 1S  Renesas diode | | |
| 4 | 1SS106 | SMALL SIGNAL SCHOTTKY DIODES R SEMICONDUCTOR
1SS106
SMALL SIGNAL SCHOTTKY DIODES
FEATURES
Detection effciency is very good Small temperature coefficient High reliability with glass seal For use in RECORDER, TV, RADIO, TELEPHONE as detectors, super high speed switching circuits small current rectifier High temperature solderi  JINAN JINGHENG ELECTRONICS diode | | |
| 5 | 1SS106 | Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching 1SS106
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
ADE-208-153A (Z) Rev. 1 Oct. 1998 Features
• Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal.
Ordering Information
Type No. 1SS106 Cathode White 2nd band Wh  Hitachi Semiconductor diode | | |
| 6 | 1SS108 | Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching 1SS108
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
ADE-208-154A (Z) Rev. 1 Features
• Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal.
Ordering Information
Type No. 1SS108 Cathode White 2nd band Black Mark H Hitachi Semiconductor diode | | |
| 7 | 1SS110 | Silicon Epitaxial Planar Diode for Tuner Band Switch 1SS110
Silicon Epitaxial Planar Diode for Tuner Band Switch
ADE-208-179B (Z) Rev. 2 Features
• Low forward resistance. (r f = 0.9 Ω max) • Suitable for 5mm pitch high speed automatical insertion. • Small glass package (MHD) enables easy mounting and high reliability.
Ordering Information
T Hitachi Semiconductor diode | |
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